Abstract
TaN x nanoscale thin-films and Cu/TaN x multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaN x films and thermal stabilities of Cu/TaN x/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS). Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaN x thin-films are smooth. With the increasing of N 2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaN x thin-films increase, and the diffusion barrier properties of TaN x thin-films is improved. TaN 1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 °C for 60 s. The failure of TaN x is mainly attributed to the formation of Cu 3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.
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