Abstract
To improve the diffusion barrier effects of W against Cu, W-N/W multilayers formed by electron cyclotron resonance (ECR) N2 plasma exposure on W layers were investigated. Cu/W-N/W/Si multilayer structures were measured using secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and electric resistance change. The W-N/W films showed a dramatic improvement in barrier properties over those of metallic W films. When the thickness of the W-N/W barrier layer was only 5 nm, the Cu/W-N/W/Si multilayer retained the multilayer structure even after annealing at 873 K for 1 h in H2 without increase of resistivity. The thickness of the W-N layer formed by ECR plasma nitridation was less than 1-2 nm, which provided an excellent barrier effect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
