Abstract
Diffusion and electrical properties of iron-related defects in n-type silicon are studied in Czochralski (CZ) and floating zone (FZ) silicon by means of deep level transient spectroscopy and the Hall effect. Introduction and annealing behaviors of electrically active iron-related defects reveal that these defects can be related to complexes containing interstitial iron atoms. The formation of iron-related defects at high temperatures includes defect reaction processes such that the observed complexes could be due to the intermediate states in consecutive reactions of iron-related complex formation. The electrically active complexes are independent of phosphorus or oxygen atoms. The iron-related defects observed in CZ silicon are identical to those observed in FZ silicon.
Published Version
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