Abstract
Pure Ni was irradiated with high-energy (150MeV Phosphorus) ions up to doses of 5.3×1013, 1.6×1014 and 4.1×1014 ions/cm2 and with 2MeV electrons up to 3×1018 e-/cm2. The resulting defect structures were studied at room temperature using diffuse X-ray scattering (DXS) methods. The size distribution of dislocation loops was analyzed by fitting the theoretical diffuse X-ray scattering intensities of the dislocation loops to the experimental ones. The number density of vacancy loops increased linearly with dose whereas their sizes did not increase. This implies that a vacancy-loop was formed by single cascade. On the other hand, the size of interstitial loops for the case of high-energy ion-irradiation was smaller than that for electron-irradiation, indicating the annihilation of free interstitials contributing to the formation of large interstitial-loops for high-energy ion-irradiation.
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