Abstract
The possibility of using diffuse X-ray scattering for obtaining information about the structure of native oxide layers on real semiconductor surfaces was demonstrated. Equi-intensity contours of the diffuse X-ray scattering in the ( hhl) plane of reciprocal space in GaAs suggest a model of oriented crystalline oxide particles on the Ga(111) face. Ordering is produced by the mechanical-chemical polishing of the GaAs surface. Diffuse streaks in the [111] direction are interpreted as being due to a two-dimensional effect in the scattering phenomenon and are consistent with a thickness of 20±3 Å for the oxide layer.
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