Abstract
Diffraction methods were applied to study irradiation and annealing effects on TlN3. Crystallographic lattice constant and cell volume changes upon x-ray irradiation were determined as function of irradiation time and radiation intensity. From the character of these curves some conclusions were drawn about the physical processes causing the effects. The reversibility of these processes was studied by annealing experiments at various temperatures and in both air and helium atmospheres. Preliminary studies of radiation damage on uv-irradiated samples were carried out in order to relate the diffraction results to the TlN3 absorption spectrum and photoconductivity data.
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