Abstract
The synchrotron investigation method is presented for structure research of semiconductor heterosystems with homogeneous layers and superlattices using the variable wavelength of a synchrotron radiation beam passing at the immobile sample. The used experimental procedure is potentially suitable for in situ X-ray diffractometry during the growth of epitaxial layers. For the proposed procedure, the equations are derived for the first time to measure tetragonal crystal lattice distortions and superlattice period distribution. The experimental results have been obtained for heterosystems with layers of Al x Ga 1− x As grown by molecular-beam epitaxy (MBE) onto GaAs substrates.
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