Abstract
We report on the first successful growth of ZnTe nanowires and on their basic structural properties. The nanowires were produced by molecular beam epitaxy (MBE) with the use of mechanism of catalytically enhanced growth. A thin layer of gold layer (3 to 20 A thick) annealed in high vacuum prior to the nanowires growth was used as a source of catalytic nanoparticles. Annealing of GaAs substrate with gold layer, performed prior to the MBE growth, leads to formation of Au‐Ga eutectic droplets. The presence of Au‐Ga droplets on GaAs substrate surface induce the ZnTe nanowire growth via vapor‐liquid‐solid mechanism, in growth conditions differing form those used in the molecular beam epitaxial growth of ZnTe layers only in the substrate temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
