Abstract
In this work, we propose a differentially graded double-gate junctionless transistor (DGJLT) and compare it with a uniformly doped DGJLT in respect of on-current, off-current and [Formula: see text]/[Formula: see text] ratio. In our investigation, we found that the differentially graded DGJLT shows significant improvement in device performance and hence it may prove to be a better switching device when compared to uniformly doped DGJLT. In this paper, we also show the electron concentration in off and on state for both the devices and find that differentially graded DGJLT has better control over the channel.
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