Extraction and Analysis of Mobility in Double Gate Junctionless Transistor

Abstract

In this work, a new methodology to extract bulk (µbulk) and accumulation (µacc) mobility in symmetric Double Gate (DG) Junctionless transistor is presented. The method is based on the modification of McLarty function to distinguish and extract mobility values and consistent with the current flow mechanisms in JL MOSFET. Results indicate higher values of accumulation mobility as compared to bulk mobility values due to screening effect. The degradation of mobility is lower at higher doping concentrations and the same is also evident from the second order degradation coefficient (θ2) and normalized transconductance (gm/gm_max) curves. The extracted values of bulk mobility compares favorably with the published experimental data in the literature. The work provides insights into device operation, extraction and interpretation of mobility components and be useful for model development and performance estimation.