Abstract
In this article differential evolution based method of small signal modeling of GAN HEMT has been investigated. The method uses a unique search space exploration strategy to obtain optimized values of intrinsic and extrinsic elements pertaining to compact small signal model from extracted equivalent circuit elements and measured S-parameter data. Effectiveness of the method has been illustrated by comparing the measured S-parameter data of a 4 × 0.1 × 75 μm2 GaN/SiC HEMT in the frequency range of 1 to 30 GHz wherein modeled and measured data are in good agreement.
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