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Abstract
Chemical vapor deposition (CVD) prepared TiO2 films, with and without Nb doping, were subjected to enhanced differential charging using an external bias and analyzed by x-ray photoelectron spectroscopy (XPS). It was found that charge barriers exist between the Ti and Si/O components in the undoped sample indicating an incomplete chemical interaction. After Nb doping, these differences are eliminated showing good electrical connection between all sample components. These results illustrate how differential charging can be used to identify electrical and chemical properties of doped films beyond traditional XPS measurements. They also provide information that is relevant to the understanding of passivation in the composite samples. The authors show the importance of additional charge compensation as well as correct mounting when employing the technique.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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