Abstract
InGaN MQW LEDs, grown by metal-organic chemical vapor deposition (MOCVD) on Si(111) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si(111) substrate and inductively coupled plasma (ICP) etching the transferred LED film to Si-doped layer, a vertical structure GaN blue LEDs were then fabricated. The characteristics of the lateral structure LED (grown on Si) and the vertical structure LED (bonded on Si) were investigated. It shows the performance of vertical structure LEDs had obviously been improved compared to the lateral structure LEDs and the tensile stress in GaN layer of vertical structure LEDs is smaller than that in lateral structure LEDs.
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