Abstract
Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications. In this paper, the effects of Junction Field Effect Transistor (JFET) region width and JFET doping (JD) on conduction and SC capability of the 3.3 kV planar-gate SiC MOSFETs are systematically investigated by experiments and simulations. When the JFET width (WJFET) of device without JD is smaller, the positive temperature coefficient of the special on-resistance (Ron,SP) is larger. The JD is effective to improve the Ron,SP, but excessive electric field in gate oxide induced by JD should be paid more attention. The optimization of WJFET can be used to improve both Ron,SP and short circuit withstanding time (SCWT) at the same time. The drain-source current (Ids) and SCWT of the optimized devices are 50 A and more than $20~{\mu }\text{s}$ , respectively, which is state-of-the-art for 3.3 kV SiC MOSFETs.
Highlights
Compared with silicon power devices, silicon carbide (SiC) power devices possess lower power loss, higher operation temperature, higher switching frequency, and better heat dissipation owing to its superior material properties, such as wider bandgap, higher critical electric field strength, and higher thermal conductivity [1]–[3]
Development of 3.3 kV SiC Metal-OxideSemiconductor Field-Effect Transistors (MOSFETs) in halfbridge power modules are of great interest for industrial and traction applications to improve system efficiency and reduce cost of power conversion systems compared to the state-of-the-art silicon IGBT based technology [4]
For SiC MOSFETs with a voltage rating under 1700 V, the on-resistance is strongly dependent on the channel resistance, while the Junction Field Effect Transistor (JFET) resistance play a significant role when voltage rating is above 3.3 kV
Summary
Compared with silicon power devices, silicon carbide (SiC) power devices possess lower power loss, higher operation temperature, higher switching frequency, and better heat dissipation owing to its superior material properties, such as wider bandgap, higher critical electric field strength, and higher thermal conductivity [1]–[3]. Development of 3.3 kV SiC Metal-OxideSemiconductor Field-Effect Transistors (MOSFETs) in halfbridge power modules are of great interest for industrial and traction applications to improve system efficiency and reduce cost of power conversion systems compared to the state-of-the-art silicon IGBT based technology [4]. In most cases of industrial converters, the SCWT of switches is required around 10 μs in order to survive accidental event, especially in motor drive applications [10], [11]. Both high conduction current and expected device reliability are essential in traction inverter applications. The effects of WJFET on SC capability and the corresponding electro-thermal behaviors are studied in detail
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