Abstract
The damaging of the buried oxide in n-channel SOI-MOSFETs during hot carrier stress has been described by several authors, Observed damaging mechanisms are hole trapping and interface state generation. Almost all investigations were made with devices fabricated on SIMOX substrates. Hole and electron trapping in SIMOX and BESOI material was investigated by X-ray irradiation, front gate oxide hot carrier degradation was also studied. In this work the damaging of the buried oxide in ultra thin (45 nm) n-channel SOI-MOSFETs during front channel hot carrier stress has been investigated The magnitude of the different damaging mechanisms in identically processed devices on SIMOX and two different BESOI substrates was compared.
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