Abstract
We performed electron-spin-resonance (ESR) and electrically-detected-magnetic-resonance (EDMR) spectroscopy on 4H-SiC(1120)/SiO2 interface defects to study differences between polar-face and non-polar-face 4H-SiC MOS interfaces. We found that in the non-polar-face MOS system, interface defects prefer to form spin-less states of doubly-occupied states and/or empty states, probably due to charge transfer between Si and C atoms at the interfaces.
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