Abstract
AbstractWe report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.
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