Abstract
In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.
Highlights
Carbon nanotube-based electronic devices such as carbon nanotube field-effect transistors (CNTFETs) and electronic circuits have been investigated extensively in the past years for the application of future nanoelectronic devices [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15]
We report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) using dielectrophoresis (DEP), which is simple and unique compared to other methods [22,23]
Fabricated the why wafer probed and measured by one as d ratio varied in the CNTFETs was because the profile and number of CNTs positioned above
Summary
Carbon nanotube-based electronic devices such as carbon nanotube field-effect transistors (CNTFETs) and electronic circuits have been investigated extensively in the past years for the application of future nanoelectronic devices [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15]. Since carbon nanotubes (CNTs) have a high aspect (ratio of the length to diameter) with a diameter of several nanometers and a length of several micrometers, the electrons or holes in the tubes are subject to a strong quantum-confinement effect in all directions perpendicular to the tube, making their transport in the tube a ballistic transport with less scattering and collisions [16,17] These properties are not available in bulk electronic materials and can make carbon nanotube field-effect transistors (CNTFETs) operate at a high speed and low power without energy dissipating in the tube [18]. Since the DEP-based device fabrication steps are compatible with Si technology processes, they are capable of being further optimized by following process development protocols practiced by the semiconductor industry and can lead to the wafer-scale fabrication of CNT electronic devices and sensors
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