Abstract
Epitaxial 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin films with single-crystal perovskite structure have been grown by pulsed laser deposition (PLD) on the (110) SrRuO3/SrTiO3 substrates. Temperature-dependent dielectric measurements show obvious characteristics of a diffused phase transition. Typical P-E hysteresis loops with a distinct ferroelectric imprint phenomenon are observed in these BZT-BCT thin films with a remnant polarization of 2.0 μC/cm2 and coercive field of 187 kV/cm. Small leakage currents (<1 × 10−6 A/cm2) are obtained in these thin films under an electrical field of 240 MV/m. These BZT-BCT thin films have shown large dielectric tunability values ranging from 75.8% to 85.7%, under a wide temperature range from 200 K to 330 K and a frequency range between 100 Hz and 100 kHz, which shows their good temperature and frequency stability. Such excellent dielectric tunability properties in these (110)-oriented BZT-BCT thin films promise their great potentials in practical phase shifter applications.
Highlights
As is well-known, lead zirconate titanate (PZT) materials exhibit excellent piezoelectric and ferroelectric properties and have been widely used in microelectronic sensors or micro-electro-mechanical system (MEMS) [1,2,3]
Many efforts have been devoted to the development of lead-free ferroelectrics
Based on the published literature, we found that BZT-BCT materials could exhibit large dielectric tunability at room temperature, depending on their composition [18,19]
Summary
As is well-known, lead zirconate titanate (PZT) materials exhibit excellent piezoelectric and ferroelectric properties and have been widely used in microelectronic sensors or micro-electro-mechanical system (MEMS) [1,2,3]. MgO (100) single crystal substrate by PLD and studied their temperature-dependent conduction mechanisms [18] In another report, they prepared BZT-BCT (x = 0.5) polycrystalline thin films on. Lin et al prepared (001)-oriented epitaxial BZT-BCT (x = 0.5) thin films on SrRuO3 (SRO)-coated (001) SrTiO3 single crystal substrates using the PLD method and studied the oxygen partial pressure during the PLD process on the ferroelectric and piezoelectric properties of their films [20]. We used the PLD method to prepare epitaxial BZT-BCT (x = 0.5) thin films on the (110) single crystal SrTiO3 (STO) substrates with bottom electrode SrRuO3 (SRO) buffer layer We chose such a composition due to the fact that it exhibits the best piezoelectric properties in the BZT-BCT material family [4]. These (110)-oriented BZT-BCT thin films’ crystal structure, microstructure, phase transitions, and ferroelectric properties were systematically studied
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