Dielectric Surface Roughness Scattering Limited Performance of MLGNR Interconnects

Abstract

Based on an equivalent single conductor model incorporating surface roughness scattering, the effect of the surface roughness of an underlying dielectric material on the performance of multilayer graphene nanoribbon (MLGNR) interconnects with side contacts is investigated. The performance of MLGNR interconnects with different doping concentrations on the most common dielectrics [SiO2, boron nitride, and silicon carbide (SiC)] is compared with that of Cu counterpart in terms of the time delay and the bandwidth. Results show that the surface roughness of the dielectric material can severely degrade the performance of MLGNR interconnects; hence, it must be taken into account in design considerations. While MLGNR interconnects with perfect edges on the SiC substrate outperform Cu counterpart both in terms of time delay and bandwidth, for other substrate materials, the performance of MLGNR interconnects with respect to Cu counterpart depends on doping concentration and interconnect length.