Abstract
AbstractThe optical properties of a direct‐gap semiconductor are investigated under conditions of a strong optical pumping by an intense laser source of frequency slightly larger than the energy band gap. By taking into account the Coulomb interaction between electrons and holes we found that the energy gap in the quasi‐particle spectrum diminishes. The dielectric constant of the system is calculated in the generalized Hartree‐Fock approximation. The Raman cross‐section is found to vanish for energies below 2Δ, where Δ is the quasi‐particle energy gap.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
