Abstract
This paper presents an extended analysis of dielectric relaxations in ferroelectric Ba0.85Sr0.15TiO3 thin films deposited by a sol–gel technique on Pt/Ti/SiO2/Si substrates. By means of dielectric, impedance and ac conductivity analysis, it is revealed that both temperature and film thickness modify strongly the resulting behavior under small ac signal. Indeed a ferroelectric-to-paraelectric transition is observed at Tc = 75 °C. Moreover, low frequency dispersion is observed caused by the interfacial polarization in film/electrode and/or in grain boundary interfaces. Simultaneously, above Tc one marks the presence of broad peaks in the permittivity at high temperatures. This can be attributed to the possible existence of polar nanoregions due to oxygen vacancies migration. The effect of ferroelectricity on admittance is also discussed. It is revealed that, dielectric properties of the MIM structures are thickness independent in the ferroelectric state. Whereas, in the paraelectric state it depends strongly on thickness as well as frequency.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
