Dielectric Relaxation of Rare Earth Ordered Double Perovskite Oxide Ba2ErTaO6

Abstract

The electrical properties of rare-earth based ordered double perovskite oxide barium erbium tantalate, Ba2ErTaO6 synthesized by solid-state reaction method are investigated. The x-ray diffraction pattern of the sample shows cubic Fm3m phase at room temperature with ordering of the B cations. Fourier transform infrared spectrum shows two primary phonon modes of the sample at around 350 cm−1 and 600 cm−1. The dielectric relaxation of the sample is investigated in the frequency range from 50 Hz to 1.1 MHz and in the temperature range from 303 K to 673 K. Electric modulus and electrical impedance data are fitted to the Cole–Cole equation. The frequency dependent conductivity spectra follow the power law. Summerfield scaling is used to explain the conduction mechanism. The scaling behavior of the imaginary part of the impedance spectra suggests that the relaxation shows the same mechanism at various temperatures. The complex impedance plane plots show that the relaxation (conduction) mechanism in this material is mainly due to grain boundary effect for all temperatures and grain effect for low temperature. The relaxation frequency corresponding to dielectric loss is found to obey Arrhenius law with activation energy of 0.50 eV. The values of activation energy indicate that the dielectric relaxation and the conduction mechanism are due to adiabatic small polaronic hole hopping mechanism.