Abstract
Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the lanthanide-based ternary oxide and silicon substrate) and the parasitic effects. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.
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