Abstract
This research article represents the fabrication and characterization of Neodymium doped YCrO3. Different optical parameters like optical bandgap energy and Urbach energy are evaluated. The gradual decrement of activation energy is observed when Neodymium doping content gradually increases. From the capacitance-voltage characteristics, free carrier concentration and trap carrier concentration are calculated, which increase with Nd doping content. Current-Voltage Characteristics of the different samples are measured at different temperatures. It follows the diode equation for the Schottky Barrier Diode (SBD) following thermionic emission. The graphical representation of current and voltage shows non-linearity, which cites the concept of Schottky diode. Another observation is that the barrier height is reduced, and the ideality factor is increased with the increase of doping concentration of Neodymium. The obtained value of the ideality factor is large, and it may be due to generation-recombination of charges inside the depletion layer and also tunneling through the barrier.
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