Abstract
We studied the dielectric properties of SrTiO 3 (STO) thin film prepared by pulsed laser deposition in a mixture of 18O 2/ 16O 2 gas during deposition. We fabricated an STO capacitor from an YBa 2Cu 3O 7/SrTiO 3/YBa 2Cu 3O 7 multilayer structure by using patterning, ion milling, and chemical mechanical planarization. The temperature dependence of ɛ r of STO thin film prepared in a 70% 18O 2 shows Curie–Weiss behavior down to 2 K without any indication of transition to the ferroelectric state. The frequency dependence of ɛ r at 2.2 K shows that ɛ r is almost constant in the region between 0.1 kHz and 1 MHz. This differs from the behavior of ɛ r of an STO thin film prepared in pure 16O 2, which increased as frequency decreased. The result indicates that only small amount of 18O atoms could be incorporated during deposition, and most of the oxygen atoms were transferred from the target.
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