Abstract
Pb0.97La0.02(Zr0.87−xSnxTi0.13)O3(PLZST,x=0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FER) region, near the morphotropic phase boundary (MPB), were deposited on the Pt‐electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature‐dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature (Tc) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films withx=0.07, and the maximum τ value was 78.1%.
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