Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films grown on platinum-buffered silicon substrates

Abstract

(Pb, La)(Zr, Sn, Ti)O3 (PLZST) antiferroelectric (AFE) thin films with different compositions were deposited on Pt-buffered silicon wafers by the sol–gel process. The phase structure and the surface morphology of the PLZST AFE thin films were analysed by XRD and SEM, respectively. The electric field induced AFE-to-ferroelectric (AFE–FE) phase transformation behaviour of the PLZST thin films was examined by polarization versus field (P–E) and relative permittivity versus field (εr–E) measurements, with emphasis placed on composition-dependent phase switching field. The phase switching current was investigated as a function of a gradually changed dc electric field. Furthermore, the effect of the composition of the PLZST thin films on the Curie temperature (Tc) was also studied in detail.