Abstract
A new stacking method via variation of substrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystallineBa0.5Sr0.5TiO3 thin films with higher dielectricconstant, higher breakdown strength and lower leakage current densitiesthan those prepared by a conventional deposition method. The improvedfigure of merit G (ε0εrEb) of theBa0.5Sr0.5TiO3 thin films implies that they are afeasible insulation layer for thin film electroluminescent devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
