Abstract
A new stacking method via variation of substrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystallineBa0.5Sr0.5TiO3 thin films with higher dielectricconstant, higher breakdown strength and lower leakage current densitiesthan those prepared by a conventional deposition method. The improvedfigure of merit G (ε0εrEb) of theBa0.5Sr0.5TiO3 thin films implies that they are afeasible insulation layer for thin film electroluminescent devices.
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