Dielectric properties of heterostructured BZT thin films prepared by sol–gel technique

Abstract

In this work, we used the low loss and non-hygroscopic MgTiO 3 (MT) for the fabrication of the Ba(Zr 0.20Ti 0.80)O 3:MgTiO 3 (BZT:MT) heterostructured thin films by sol–gel processing. The dielectric properties of heterostructured thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, both MT and BZT remained as two distinct individual entities in the heterostructured thin films and a considerable reduction in the dielectric loss has been observed. The heterostructured thin films with lower dielectric constant and dielectric loss could be attractive materials for tunable microwave device.