Abstract
Artificial BaTiO3(BTO)/SrTiO3(STO) superlattices on STO substrates were fabricated by the molecular beam epitaxy process. The capacitance and the complex admittance of superlattices with interdigital electrode structures were measured at 1–110 MHz. The dielectric properties of the superlattices were evaluated by the electromagnetic analysis. It was found that the dielectric permittivity changed with the structure of superlattices and the highest permittivity of 33 000 was obtained for [(BTO)10/(STO)10]4 superlattice from 1 to 110 MHz.
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