Abstract

Based on the Ti-vacancy defect compensation model, (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 (Ln=La,Sm,Eu,Dy,Y) ceramics have been fabricated via the conventional solid-state reaction method. The microstructures, dielectric properties, and ferroelectric relaxor behavior of (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 ceramics have been investigated. The results indicate that rare-earth ions with various ionic radii enter the unit cell to substitute for A-site Ba2+ ions and inhibit the grain growth. The typical ferroelectric relaxor behavior is induced due to the rare-earth ions substitution. The diffuseness of the phase transition and the degree of ferroelectric relaxor behavior are enhanced, the TC is remarkably shifted to lower temperature, and the tunability is suppressed with the increase of x value and substituted ionic radius for (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 (x=0.005–0.04, Ln=La,Sm,Eu,Dy,Y) ceramics. Tunable ferroelectric materials with moderate dielectric constant and low dielectric loss can be obtained by manipulating the doping amount of suitable rare-earth ions.

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