Abstract
Dielectric properties and interfacial microstructures of HfO2 films deposited by radiofrequency(RT) magnetron sputtering in different ambient have been investigated.It is demonstrated that the dielectric properties of HfO2 film deposited at room temperature in pure Ar ambient(effective dielectric constant is about 17.7;flat band voltage is 0.36 V and leakage current density is about 4.15 × 10?3 A cm?2 at 1 V gate voltage) are better than that of films deposited in Ar+N2 or Ar+O2 mixed ambient.Investigated by using high-resolution electron microscope and X-ray photoelectron spectroscopy,the unstoichiometric HfSixOy mixed with HfSix interfacial layers are found to exist between stoichiometric amorphous HfO2 films and Si(100) substrates.These unstoichiometric interfacial layers with low-k are responsible for the decrease of effective dielectric constant of HfO2 films and the clock-wise hysteresis of capacitance-voltage curves of MOS capacitor structures.
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