Dielectric properties and auger electron spectroscopy on anodized thin‐film capacitors of Ta‐AI‐N

Abstract

AbstractThin‐film capacitors have been fabricated by anodization of Ta‐AI film in an atmosphere which includes O to 5% nitrogen without degradation of quality at 300°C. This type of Ta‐AI capacitor has tan δ and temperature coefficient of capacitance (TCC) which are smaller than those of Ta‐AI film without nitrogen even before heat treatment. These values are further decreased after heat treatment in air. to clarify this effect, Auger electron spectroscopy is conducted to find the depth profiles of the elements. It is found that a nonstoichiometric oxygen diffusion layer between the base metal and an anodized layer is reduced by heat treatment.