Abstract
The concept of Dielectric Pocket (DP) in Ge-source Double Gate Junctionless MOSFET (DG JLMOSFET) is proposed to suppress the Short Channel Effects (SCEs) and provide better O FF current characteristics. The use of Dielectric Pocket at the source and drain ends suppress the entrance of lateral electric field and diffusion of carriers from source/drain into channel and improves Io n /Ioff current ratio for optimum performance of the device. This results in significant reduction in SCEs and O FF current. The switching speed of Ge-source DG JLMoSFET is investigated for different length and thickness of Dielectric Pocket. It is seeing that the Switching speed improves as the length and thickness of Dielectric Pocket is increased. On comparison with conventional MOSFET (without Dielectric Pocket), it is observed that the proposed structure gives better performance. Thus DP Ge-source DG JLMOSFET is useful in the design of Low Power VLSI circuits.
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