Dielectric, piezoelectric and dc bias characteristics of Bi-doped PZT multilayer ceramic actuator

Abstract

In this study, the microstructure, dielectric, piezoelectric and dc bias properties of the Bi-doped PZT (PZTB) multilayer piezoelectric actuators, have been discussed. The thickness of the dielectric monolayer was about 70 μm, and a relatively uniform distribution of the grain size was developed. The application of a large dc bias field resulted in a decrease in the dielectric constant and dielectric loss of the multilayer piezoelectric ceramics. The shift of the Curie temperature (Tc) towards a higher value and stabilized temperature-dependent dielectric properties were observed under the dc bias field. The increase in parameter γ suggested the enhancement of the degree of diffuseness of the phase transition. The large displacement reached 0.11% of the thickness of the multilayer piezoelectric ceramic under a low driving voltage of 150 V, indicating the potential of commercial applications of the studied multilayer piezoelectric actuators. This study provides specific experimental data to evaluate the practical application of the Bi-doped PZT multilayer piezoelectric actuators.