Abstract
In this study the changes in the resonance frequencies of horizontally and vertically positioned split ring resonator (SRR) and double sided split ring resonator (DSRR) layered structures, which are excited by microstrip transmission line, depending on the dielectric constant and the thickness of the material under test (MUT) and the location of the split at the resonator relative to the transmission line has been observed and the sensitivity analyses have been carried out. According to this, vertically positioned resonator structures are shown to be more sensitive than the horizontally positioned ones considering the resonance response with respect to the changes of MUT dielectric constant. In the meantime, it has been revealed that the sensitivity performances of the studied structures are dependent on the MUT dielectric constant range and the MUT thickness. These results are important for microwave sensor applications which is a trend topic.
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