Dielectric Loss in CaF2 Doped with Oxygen Ions

Abstract

Dielectric loss was measured on CaF2 single crystals heated in air at 750° C for 30 hr to introduce O2- ions. The loss measurements were made in parallel and in perpendicular directions to the CaF2 surface region which contained most of the O2-. The layer containing O2- was more conducting and therefore produced a space charge relaxation near 10 kcps at 210°C. A similar loss peak was previously reported as due to oxygen ion-fluorine vacancy dipole relaxation.