Dielectric Gradient Force Actuation with on-chip electrode and Free-Space Optical Measurement of SiNx Nanomechanical Resonator

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ABSTRACTNanomechanical resonators made from silicon nitride with residual stress is actuated using dielectric field gradient force. Doubly clamped nanomechanical resonators are made from SiNx-SiO2-Si tri-layer substrate and DC electric field induces a temporary dipole moment while a small AC electric field drives beam resonator by dielectric force. Realized nanomechanical resonators show resonant motion of high resonant frequency (up to ~31 Mhz) and mechanical quality factor up to over 48,000 at room temperature and moderate vacuum condition. From the FEA (Finite Element Analysis) of resonant motion, doubly clamped resonator shows torsional motion and in-plane motion which can be assigned to additional multiple modes in resonant response measurement