Dielectric correlation to shallow impurity ground state in silicon

Abstract

The ground state energy of shallow impurity donor states in Si has been calculated using a corrected potential V = -e 2/r ϵ (r) with ϵ(0) = 1 and ϵ(∞) = ν. By a plausible choice for ϵ(r) one obtains a shift of the hitherto predicted energy value by about 40 per cent thereby considerably improving the agreement with the experimental result for a P donor.