Abstract
Empirical formulae are presented relating the dielectric constants of zinc-blende semiconductors with the average atomic number of the constituent atoms. The high-frequency ε∞ and static ε0 dielectric constants can be represented by an empirical linear relation that is a simple function of the average atomic number and the product of ionic charges (ZaZc). The calculated results are compared with the available experimental data and previous calculations based on phenomenological models.
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