Abstract
A correlation is presented for the high frequency ε ∞ and static ε o dielectric constants of A IIB V I and A IIIB V semiconductors with the zinc blende structure. The high frequency ε ∞ and static ε o dielectric constants can be represented by an empirical linear relation that is a simple function of melting temperature T m , atomic volume Ω and product of ionic charges ( Z 1 Z 2 ). Values of high frequency ε ∞ and static ε o dielectric constants of A IIB V I and A IIIB V zinc blende semiconductors exhibit a linear relationship when plotted against the k B T m / Ω ( k B = Boltzmann’s constant ), but fall on two straight lines according to the product of ionic charges of the compounds. The calculated results are compared with available experimental data and previous calculations based on phenomenological models.
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