Abstract
MoO3 is a promising transition metal oxide due to its high dielectric constant (κ) and multifunctionality in electronic and optoelectronic applications. Oxidation-induced nanoscale MoO3, synthesized via oxidation scanning probe lithography (o-SPL) of MoS2, requires in-depth characterization of its dielectric properties. In this study, we measured the κ of a single MoO3 nanostructure, which was confirmed to be in the amorphous phase through water solubility tests and high-resolution transmission electron microscopy (HRTEM). Using electrostatic force microscopy (EFM) and numerical calculations, we determined a high κ value of approximately 25, nearly six times higher than that of SiO2. Additionally, nanoscale κ imaging revealed that the κ of MoO3 nanostructures is independent of their size. These findings suggest that oxidation-induced MoO3 nanostructures are promising candidates as high-κ dielectric materials for future nanoscale devices.
Published Version
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