Abstract
Dense silicon nitride ceramic was sintered by hot pressing at 1800 °C for 3 h under the uniaxial pressure of 40 MPa in N2 atmosphere using CeO2–MgO as sintering aid. In this study, the effect of the addition of CeO2–MgO on the sintering of silicon nitride ceramics was investigated. The equiaxed α-Si3N4 was transformed into a rod-shaped β-Si3N4 completely by using XRD and SEM analysis. The sample reached a maximum density of 98.2% and a high flexural strength (872 ± 65 MPa). The range of dielectric constant is 10.79–11.06 (12.4 GHz), and the dielectric loss is in the order of 10 E−3. The highest thermal conductivity achieved in all samples is 45.5 W/mK.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
