Abstract
We propose a new mechanism for dielectric breakdown in thin gate oxides. Using First Principles calculations, we have found a new meta-stable structure where an interstitial Hydrogen Radical attaches to a network Oxygen without breaking the Si-O bond (Att_Rad state). Calculations in an external electric field find that the energy of the Att_Rad state is reduced. A pair of such Att_Rad states is further stabilized when they form a dimer (Att-Dimer state). This electric field induced Att_Dimer state is thermally accessible for very thin oxides and can form a percolating path that may explain the phenomenon of soft breakdown.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
