Abstract
TlIn1 – xSbxSe2 (x = 0–0.005 Sb) single crystals have been grown by the Bridgman method from polycrystals, which were synthesized from initial high-purity chemical elements (Tl, In, Sb, Se). The influence of antimony dopant on the dielectric properties and ac conductivity of TlIn1 – xSbxSe2 (x = 0–0.005 Sb) single crystals has been investigated. The experimental study of the frequency dispersion of the dielectric coefficients and conductivity of TlIn1 – xSbxSe2 single crystals has revealed the nature of dielectric losses (losses on through conductivity), establish the hopping charge-transfer mechanism, and estimate the parameters of the states localized in the band gap.
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