Abstract
Borophosphosilicate bonded porous silicon nitride (Si 3N 4) ceramics were fabricated in air using a conventional ceramic process. The porous Si 3N 4 ceramics sintered at 1000–1200 °C shows a relatively high flexural strength and good dielectric properties. The influence of the sintering temperature and contents of additives on the flexural strength and dielectric properties of porous Si 3N 4 ceramics were investigated. Porous Si 3N 4 ceramics with a porosity of 30–55%, flexural strength of 40–130 MPa, as well as low dielectric constant of 3.5–4.6 were obtained.
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