Abstract
Silica (SiO 2) bonded porous silicon nitride (Si 3N 4) ceramics were fabricated from α-Si 3N 4 powder in air at 1200–1500 °C by the oxidation bonding process. Si 3N 4 particles are bonded by the oxidation-derive SiO 2 and the pores derived from the stack of Si 3N 4 particles and the release of N 2 and SiO gas during sintering. The influence of the sintering temperature and holding time on the Si 3N 4 oxidation degree, porosity, flexural strength and dielectric properties of porous Si 3N 4 ceramics was investigated. A high flexural strength of 136.9 MPa was obtained by avoiding the crystallization of silica and forming the well-developed necks between Si 3N 4 particles. Due to the high porosity and Si 3N 4 oxidation degree, the dielectric constant (at 1 GHz) reaches as low as 3.1.
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