Abstract
Dielectric response of Na1/3Ca1/3Y1/3Cu3Ti4O12 ceramic, fabricated via a conventional solid-state method, has been investigated in the frequency range 100–2 MHz at temperatures from −80 to 200 °C. Single phase of Na1/3Ca1/3Y1/3Cu3Ti4O12 with cubic perovskite-related structure was confirmed by X-ray diffraction. High dielectric permittivity (>3 × 103) and low dielectric loss (~0.08) were observed at room temperature. The dielectric relaxation peaks of $$\varepsilon^{\prime \prime }$$ shifts to higher frequencies, indicating a thermally activated relaxation process. The activation energy for the dc conduction process (0.501 eV) is comparable to that for conduction at the grain boundaries (0.514 eV), indicating the dc conduction process is closely associated with the characteristics of grain boundaries in Na1/3Ca1/3Y1/3Cu3Ti4O12 ceramic.
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