Abstract
There has been considerable interest in ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. Such FE films typically consist of lead zirconate titanate (PZT) with novel oxide contacts, or layered perovskite such as Sr2Bi2TaO9. Recently, there have been reports of sputtered YMnO3 films which exhibit a single polarization axis and do not contain any volatile species of Pb or Bi. Single crystal YMnO3 exhibits satisfactory polarization (6 μC/cm2) and low coercive field (<20 kV/cm). Additionally, the dielectric constant of YMnO3 is quite low (<30) which should facilitate ferroelectric switching. In this study, sol-gel derived YMnO3 films were prepared on platinized Si wafers and their dielectric and ferroelectric properties were characterized. Their electrical properties will be discussed with respect to Y/Mn stoichiometry ratio, hexagonal phase development and processing conditions. The potential of YMnO3 as a material in non-volatile memories is evaluated.
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